Emitters of BJTs are connected to anode and cathode sides, and bases are tied together. When Q2B is on, Q1 will be off, and vice-versa.īoth BJTs are designed to work as switches. The gate is controlled by cathode side BJT (Q2B). Source of Q1 is connected to cathode side, and the drain to anode side, to ensure the body of MOSFET is reverse-biased. When Q1 is on, it acts as a diode in forward bias condition, and when it is off, it acts as a diode in reverse bias condition.
#How to simulate diode pc1d series
Q1 is the series element, and the two bipolar junction transistors, or BJTs (Q2A and Q2B) are the control elements that turn Q1 on or off. The circuit consists of P-channel enhancement mode MOSFET (Q1), two PNP transistors (Q2A and Q2B) and three resistors (R1, R2 and R3), as shown in Fig. Details for designing the circuit are also provided to enable you to easily adapt the circuit to your designs. Simulation and testing results in this article showcase the working of the typical circuit of an ideal diode or smart diode. While selecting a practical diode, its forward voltage and reverse leakage current should be as low as possible. Limitations of a practical diode call for the need of a near-ideal diode with as little forward voltage drop as possible. Another example of a diode application is reverse voltage or reverse current protection for USB supply as used in Raspberry Pi 3. Many diode applications require reverse current blocking, most common applications being battery-operated circuits. Even a Schottky diode has a forward voltage drop between 0.2V and 0.4V, which can be significant, especially when used in series with batteries with lower voltages that reduce the efficiency and life of the batteries. An ideal diode should have zero forward voltage but, unfortunately, there is no such thing as an ideal diode.Ī real diode has forward voltage drop and reverse leakage current. The typical voltage required to turn on a diode is forward voltage. A simple explanation for the working of an ideal diode circuit based on P-channel MOSFET and PNP transistor is presented here.
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